Please use this identifier to cite or link to this item: https://doi.org/10.1049/ip-map:20040128
Title: Consistent and reliable MESFET parasitic capacitance extraction method
Authors: Ooi, B.L. 
Ma, J.Y.
Issue Date: Feb-2004
Source: Ooi, B.L., Ma, J.Y. (2004-02). Consistent and reliable MESFET parasitic capacitance extraction method. IEE Proceedings: Microwaves, Antennas and Propagation 151 (1) : 81-84. ScholarBank@NUS Repository. https://doi.org/10.1049/ip-map:20040128
Abstract: An improved model is proposed to evaluate the parasitic capacitances of GaAs MESFET transistors from the cold-FET S-parameter. Inherent in most conventional parasitic de-embedding methods, the extraction result for C pd varies drastically with V gs under cold-FET measurement, and this is in great contradiction with the normally adopted bias-independent C pd assumption in active device modelling. An improved model is proposed to tackle this problem. Model parameters can thus be uniquely determined by using only two sets of cold-FET S-parameters under different V gs biasing conditions. The resulting capacitance value, C pd, is found to be independent of V gs when V gs< V p.
Source Title: IEE Proceedings: Microwaves, Antennas and Propagation
URI: http://scholarbank.nus.edu.sg/handle/10635/83577
ISSN: 13502417
DOI: 10.1049/ip-map:20040128
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