Consistent and reliable MESFET parasitic capacitance extraction method

Abstract

An improved model is proposed to evaluate the parasitic capacitances of GaAs MESFET transistors from the cold-FET S-parameter. Inherent in most conventional parasitic de-embedding methods, the extraction result for C pd varies drastically with V gs under cold-FET measurement, and this is in great contradiction with the normally adopted bias-independent C pd assumption in active device modelling. An improved model is proposed to tackle this problem. Model parameters can thus be uniquely determined by using only two sets of cold-FET S-parameters under different V gs biasing conditions. The resulting capacitance value, C pd, is found to be independent of V gs when V gs< V p.