Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83534
Title: Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films
Authors: Choi, W.K. 
Shi, J. 
Chor, E.F. 
Issue Date: Jul-2003
Citation: Choi, W.K.,Shi, J.,Chor, E.F. (2003-07). Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (4) : 1415-1421. ScholarBank@NUS Repository.
Abstract: The inductive coupled plasma etching of as-prepared and annealed hydrogenated amorphous silicon carbide films using CF4/O2 chemistry was analyzed. The etch rate of the as-prepared films was found to decrease with the decrease in the carbon content in the films. The infrared spectroscopy results show the effusion of hydrogen when the film was annealed.
Source Title: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
URI: http://scholarbank.nus.edu.sg/handle/10635/83534
ISSN: 10711023
Appears in Collections:Staff Publications

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