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https://scholarbank.nus.edu.sg/handle/10635/83534
| Title: | Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films | Authors: | Choi, W.K. Shi, J. Chor, E.F. |
Issue Date: | Jul-2003 | Citation: | Choi, W.K.,Shi, J.,Chor, E.F. (2003-07). Characteristics and mechanism of inductive coupled plasma etching of hydrogenated amorphous silicon carbide films. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 21 (4) : 1415-1421. ScholarBank@NUS Repository. | Abstract: | The inductive coupled plasma etching of as-prepared and annealed hydrogenated amorphous silicon carbide films using CF4/O2 chemistry was analyzed. The etch rate of the as-prepared films was found to decrease with the decrease in the carbon content in the films. The infrared spectroscopy results show the effusion of hydrogen when the film was annealed. | Source Title: | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures | URI: | http://scholarbank.nus.edu.sg/handle/10635/83534 | ISSN: | 10711023 |
| Appears in Collections: | Staff Publications |
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