Please use this identifier to cite or link to this item:
https://doi.org/10.1109/EMAP.2008.4784267
| Title: | Bonding interface materials evolution of intermediate In/Ag layers for low temperature fluxless solder based MEMS wafer level packaging | Authors: | Lee, C. Yu, D. Yu, A. Yan, L. Wang, H. Lau, J.H. |
Issue Date: | 2008 | Citation: | Lee, C., Yu, D., Yu, A., Yan, L., Wang, H., Lau, J.H. (2008). Bonding interface materials evolution of intermediate In/Ag layers for low temperature fluxless solder based MEMS wafer level packaging. 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 : 216-219. ScholarBank@NUS Repository. https://doi.org/10.1109/EMAP.2008.4784267 | Abstract: | In this paper, we proposed new intermediate bonding layers (IBLs) of Ag-rich composition in In-Ag solder systems in contrast to previous studies mainly based on eutectic composition. The intermetallic compounds (lMCs) at the bonding interface were investigated with respect to the bonding condition, post-bonding room temperature storage and post-bonding heat treatment. The IMCs of Ag21n and Ag2114 with high temperature resist to postbonding process are derived under process condition of wafer bonding at 180°C, 40mins and subsequent 120°C-130°C annealing for 24 hours. Based on our results, we can design proper packaging process flow so as to get reliable wafer level packaged MEMS devices. © 2008 IEEE. | Source Title: | 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 | URI: | http://scholarbank.nus.edu.sg/handle/10635/83520 | ISBN: | 9781424436217 | DOI: | 10.1109/EMAP.2008.4784267 |
| Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.