Please use this identifier to cite or link to this item:
|Title:||Bonding interface materials evolution of intermediate In/Ag layers for low temperature fluxless solder based MEMS wafer level packaging|
|Authors:||Lee, C. |
|Citation:||Lee, C., Yu, D., Yu, A., Yan, L., Wang, H., Lau, J.H. (2008). Bonding interface materials evolution of intermediate In/Ag layers for low temperature fluxless solder based MEMS wafer level packaging. 2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008 : 216-219. ScholarBank@NUS Repository. https://doi.org/10.1109/EMAP.2008.4784267|
|Abstract:||In this paper, we proposed new intermediate bonding layers (IBLs) of Ag-rich composition in In-Ag solder systems in contrast to previous studies mainly based on eutectic composition. The intermetallic compounds (lMCs) at the bonding interface were investigated with respect to the bonding condition, post-bonding room temperature storage and post-bonding heat treatment. The IMCs of Ag21n and Ag2114 with high temperature resist to postbonding process are derived under process condition of wafer bonding at 180°C, 40mins and subsequent 120°C-130°C annealing for 24 hours. Based on our results, we can design proper packaging process flow so as to get reliable wafer level packaged MEMS devices. © 2008 IEEE.|
|Source Title:||2008 10th International Conference on Electronic Materials and Packaging, EMAP 2008|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Aug 17, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.