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|Title:||Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers|
|Citation:||Lim, A.E.-J., Lee, R.T.P., Wang, X.P., Hwang, W.S., Tung, C.-H., Lai, D.M.Y., Samudra, G., Kwong, D.-L., Yeo, Y.-C. (2008). Band edge NMOS work function for nickel fully-silicided (FUSI) gate obtained by the insertion of novel Y-, Tb-, and Yb-based interlayers. ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference : 210-213. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDERC.2007.4430916|
|Abstract:||Nickel fully-silicided (FUSI) gate work function Φm was successfully tuned for the first time by the insertion of novel Yttrium- (Y) based, Terbium- (Tb) based, or Ytterbium- (Yb) based interlayer at the gate/dielectric interface. Band edge NiFUSI gate Φm (4.01 - 4.11 eV) were obtained in a gate-first process flow (950 or 1000°C anneal) by an inserted ultra-thin (∼1 nm) interlayer on SiO2 dielectric. We further demonstrate that gate-first implementation of the interlayers in a XiSi/HfO2 gate stack can realize a low Φm of ∼4.28 eV without dopant incorporation or Ni-alloying. In addition, NiSi Φm modulation between Si midgap and band edge could be achieved by varying the interlayer thickness or Ni-silicide phase. © 2007 IEEE.|
|Source Title:||ESSDERC 2007 - Proceedings of the 37th European Solid-State Device Research Conference|
|Appears in Collections:||Staff Publications|
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