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https://scholarbank.nus.edu.sg/handle/10635/83486
| Title: | Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation | Authors: | Loh, W.Y. Cho, B.C. Joo, M.S. Li, M.F. Chan, D.S.H. Mathew, S. Kwong, D.-L. |
Issue Date: | 2003 | Citation: | Loh, W.Y.,Cho, B.C.,Joo, M.S.,Li, M.F.,Chan, D.S.H.,Mathew, S.,Kwong, D.-L. (2003). Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation. Technical Digest - International Electron Devices Meeting : 927-930. ScholarBank@NUS Repository. | Abstract: | Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated. The results correlate with the statistical Weibull's distribution showing a polarity dependence breakdown in high-K stacks. A model of charge trapping at different spatial locations in HfAlO x with TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms. | Source Title: | Technical Digest - International Electron Devices Meeting | URI: | http://scholarbank.nus.edu.sg/handle/10635/83486 | ISSN: | 01631918 |
| Appears in Collections: | Staff Publications |
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