Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83486
Title: Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation
Authors: Loh, W.Y. 
Cho, B.C. 
Joo, M.S. 
Li, M.F. 
Chan, D.S.H. 
Mathew, S.
Kwong, D.-L.
Issue Date: 2003
Citation: Loh, W.Y.,Cho, B.C.,Joo, M.S.,Li, M.F.,Chan, D.S.H.,Mathew, S.,Kwong, D.-L. (2003). Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation. Technical Digest - International Electron Devices Meeting : 927-930. ScholarBank@NUS Repository.
Abstract: Using the carrier separation measurement technique, we are able to distinguish two different breakdown mechanisms: a high-K bulk initiated and an interfacial layer initiated. The results correlate with the statistical Weibull's distribution showing a polarity dependence breakdown in high-K stacks. A model of charge trapping at different spatial locations in HfAlO x with TaN gate structure is proposed to explain the polarity dependence of charge trapping characteristics and breakdown mechanisms.
Source Title: Technical Digest - International Electron Devices Meeting
URI: http://scholarbank.nus.edu.sg/handle/10635/83486
ISSN: 01631918
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

36
checked on Sep 21, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.