Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83435
Title: Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealing
Authors: Tan, L.S. 
Wang, H.T.
Chor, E.F. 
Issue Date: 2004
Citation: Tan, L.S.,Wang, H.T.,Chor, E.F. (2004). Activation of beryllium-implanted gallium nitride by combined pulse laser and rapid thermal annealing. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 3 : 2320-2323. ScholarBank@NUS Repository.
Abstract: Investigations of post-implantation annealing were carried out on gallium nitride wafers that had been implanted with beryllium ions. The thermal processes performed were rapid thermal annealing (RTA) at 1100°C for 120 s, pulse laser annealing (PLA) using a 248nm KrF excimer laser at an energy of 0.2 J cm-2, and a combination of both. It was found that the photoluminescence intensity of the PLA-treated sample was vastly improved over the RTA sample and even the as grown sample. However, off-resonance Raman and high resolution X-ray diffraction spectroscopy showed that many defects that result from the Be implantation still remained in the GaN wafer, because of the shallow penetration depth of the 248 nm laser. These defects can be annealed out. however, with a subsequent RTA process. Thus, a combination of PLA and RTA is recommended to produce good optical activation of the Be-implanted GaN, and to repair the crystal defects that arise from the implantation. © 2004 IEEE.
Source Title: International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT
URI: http://scholarbank.nus.edu.sg/handle/10635/83435
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

60
checked on Oct 5, 2018

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.