Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83433
Title: A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrate
Authors: Tan, Y.P.
Ling, Q.D. 
Teo Eric, Y.H.
Song, Y.
Lim, S.L.
Lo Patrick, G.Q.
Kang, E.T. 
Zhu, C. 
Chan, D.S.H. 
Issue Date: 2006
Citation: Tan, Y.P.,Ling, Q.D.,Teo Eric, Y.H.,Song, Y.,Lim, S.L.,Lo Patrick, G.Q.,Kang, E.T.,Zhu, C.,Chan, D.S.H. (2006). A WORM-type memory device with rectifying effect based on a conjugated copolymer of PF6Eu on Si substrate. Materials Research Society Symposium Proceedings 937 : 114-119. ScholarBank@NUS Repository.
Abstract: We report a non-volatile, write-once-read-many times (WORM) memory device based on a simple organic-inorganic heterojunction. The organic-based hybrid used is 9, 9-dihexylfluorene and Eu-complexed benzoate (PF6Eu (DBM)), which contains both electron-donor (9, 9-dihexylfluorene) and electron-acceptor (europium complex) groups. The inorganic n-type silicon substrate is used as the bottom electrode, while the Al is used as the top electrode. Under current-voltage testing, the device is able to switch from one initial non-conducting state (OFF) to a conducting state (ON) once a threshold voltage is reached under the first positive sweep. The "OFF" state is not recoverable with subsequent negative sweep after the device is turned "ON". The ON/OFF current ratio is around 4×104. Diode rectifying characteristics is also observed for the tumed-on device with a current ratio of 7×104, which is essential to address one memory cell in large passive matrix circuits. Reliability test is carried out and the device is able to sustain its "ON" state for at least 12 hours without any external bias. © 2006 Materials Research Society.
Source Title: Materials Research Society Symposium Proceedings
URI: http://scholarbank.nus.edu.sg/handle/10635/83433
ISBN: 1558998942
ISSN: 02729172
Appears in Collections:Staff Publications

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