Please use this identifier to cite or link to this item: https://doi.org/10.1109/ASSCC.2013.6691010
Title: A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C
Authors: Pathrose, J.
Zou, L.
Chai, K.T.C.
Je, M.
Xu, Y.P. 
Keywords: Bandgap reference
High temperature electronics
Ratiometric measurement
Smart temperature sensor
Issue Date: 2013
Citation: Pathrose, J.,Zou, L.,Chai, K.T.C.,Je, M.,Xu, Y.P. (2013). A time-domain smart temperature sensor without an explicit bandgap reference in SOI CMOS operating up to 225°C. Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013 : 173-176. ScholarBank@NUS Repository. https://doi.org/10.1109/ASSCC.2013.6691010
Abstract: This paper presents a smart temperature sensor operating over a wide temperature range from 25°C-225°C. The proposed smart temperature sensor eliminates the explicit bandgap reference and only requires the ratio of two diode voltages to obtain ratiometric temperature measurements. The temperature sensor is implemented with a simple time-domain architecture, resulting in low power consumption and small chip area. Fabricated in a PDSOI CMOS process, the proposed smart temperature sensor achieves an accuracy of 2°C over 25°C-225°C and consumes only 25-μA current under a 4.5-V supply with a chip area of 0.45mm2. © 2013 IEEE.
Source Title: Proceedings of the 2013 IEEE Asian Solid-State Circuits Conference, A-SSCC 2013
URI: http://scholarbank.nus.edu.sg/handle/10635/83429
ISBN: 9781479902781
DOI: 10.1109/ASSCC.2013.6691010
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