Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83418
Title: A robust and accurate drain current I-V model for MESFET
Authors: Ooi, B.L. 
Ma, J.Y.
Leong, M.S. 
Issue Date: 2001
Source: Ooi, B.L.,Ma, J.Y.,Leong, M.S. (2001). A robust and accurate drain current I-V model for MESFET. Asia-Pacific Microwave Conference Proceedings, APMC 1 : 236-239. ScholarBank@NUS Repository.
Abstract: A new empirical model has been developed to more accurately model DC I-V characteristics of GaAs MESFET transistor. The new model equations describe device drain current as a polynomial of effective gate-source voltage Veff. It is capable of accurately model the device current-voltage behaviour at different operation regions. Most specially, device operation around pinch-off region is more accurately described through the use of a specially designed transformation. Measured and modelled results are compared, and good agreement has been obtained. Comparison between the proposed model, the Curtice [1] and the Chalmers model [2] are also made.
Source Title: Asia-Pacific Microwave Conference Proceedings, APMC
URI: http://scholarbank.nus.edu.sg/handle/10635/83418
ISBN: 0780371380
Appears in Collections:Staff Publications

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