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https://doi.org/10.1109/VLSIT.2007.4339764
| Title: | A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application | Authors: | Wan, S.H. Chen, S. Xing, P.W. Chan, D.S.H. Byung, J.C. |
Issue Date: | 2007 | Citation: | Wan, S.H., Chen, S., Xing, P.W., Chan, D.S.H., Byung, J.C. (2007). A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application. Digest of Technical Papers - Symposium on VLSI Technology : 156-157. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2007.4339764 | Abstract: | Hafnium carbide (HfCx) is investigated as a novel metal gate electrode with good thermal stability for the first time. HfCx shows a very low work function of 3.8 eV on HfO2, suitable for NMOS device applications, and provides superior oxygen diffusion barrier property during high temperature annealing. In addition, there is no sign of significant Fermi level pinning with HfO2 dielectric. | Source Title: | Digest of Technical Papers - Symposium on VLSI Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/83399 | ISSN: | 07431562 | DOI: | 10.1109/VLSIT.2007.4339764 |
| Appears in Collections: | Staff Publications |
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