Please use this identifier to cite or link to this item: https://doi.org/10.1109/VLSIT.2007.4339764
Title: A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application
Authors: Wan, S.H.
Chen, S.
Xing, P.W.
Chan, D.S.H. 
Byung, J.C. 
Issue Date: 2007
Source: Wan, S.H., Chen, S., Xing, P.W., Chan, D.S.H., Byung, J.C. (2007). A novel hafnium carbide (HfCx) metal gate electrode for NMOS device application. Digest of Technical Papers - Symposium on VLSI Technology : 156-157. ScholarBank@NUS Repository. https://doi.org/10.1109/VLSIT.2007.4339764
Abstract: Hafnium carbide (HfCx) is investigated as a novel metal gate electrode with good thermal stability for the first time. HfCx shows a very low work function of 3.8 eV on HfO2, suitable for NMOS device applications, and provides superior oxygen diffusion barrier property during high temperature annealing. In addition, there is no sign of significant Fermi level pinning with HfO2 dielectric.
Source Title: Digest of Technical Papers - Symposium on VLSI Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83399
ISSN: 07431562
DOI: 10.1109/VLSIT.2007.4339764
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