Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/83297
Title: 3D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOS
Authors: Yu, D.S.
Chin, A. 
Laio, C.C.
Lee, C.F.
Cheng, C.F.
Chen, W.J.
Zhu, C. 
Li, M.-F. 
Yoo, W.J. 
McAlister, S.P.
Kwong, D.L.
Issue Date: 2004
Source: Yu, D.S.,Chin, A.,Laio, C.C.,Lee, C.F.,Cheng, C.F.,Chen, W.J.,Zhu, C.,Li, M.-F.,Yoo, W.J.,McAlister, S.P.,Kwong, D.L. (2004). 3D GOI CMOSFETs with novel IrO 2(Hf) dual gates and high-κ dielectric on 1P6M-0.18μm-CMOS. Technical Digest - International Electron Devices Meeting, IEDM : 181-184. ScholarBank@NUS Repository.
Abstract: For the first time, we demonstrate 3D integration of self-aligned IrO 2(Hf)/LaAlO 3/GOI CMOSFETs above 0.18 μm Si CMOSFETs. At EOT=1.4nm, the novel IrO 2(Hf) dual gates (4.4 and 5.1 eV workfunction) on control 2D LaAlO 3/Si devices have high electron and hole mobilities of 203 and 67 cm 2/Vs. On the 3D structure the LaAlO 3/ GOI shows even higher 389 and 234 cm 2/Vs mobilities, and process compatibility with current Si VLSI. The higher drive current, larger integration density, shorter interconnects distance, and simple process of 3D approach can help solve the AC power issue and 2D scaling limitation. ©2004 IEEE.
Source Title: Technical Digest - International Electron Devices Meeting, IEDM
URI: http://scholarbank.nus.edu.sg/handle/10635/83297
ISSN: 01631918
Appears in Collections:Staff Publications

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