Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2006.882569
Title: Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process
Authors: Ren, C.
Chan, D.S.H. 
Loh, W.Y.
Balakumar, S.
Du, A.Y.
Tung, C.H.
Lo, G.Q.
Kumar, R.
Balasubramanian, N.
Kwong, D.-L.
Keywords: CMOS
Dual work function (WF)
Gate first
Intermixing (InM)
Metal gate
Issue Date: 2006
Citation: Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L. (2006). Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process. IEEE Electron Device Letters 27 (10) : 811-813. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.882569
Abstract: This letter investigates the feasibility of adjusting the work function (WF) of TaN metal gate by intermixing (InM) of ultra-thin TaN/Metal stacks at high temperature. This could be useful for the integration of dual-WF metal gates in a gate-first CMOS process without exposing gate dielectric during metal-etching process. TaN/Tb and TaN/Ir stacks were studied, and it is found that the WF of TaN can be readily modulated through metal InM in TaN/Tb stack after high-temperature treatment (∼1000°C), which simulates the source/drain dopant activation process in a gate-first CMOS process. Factors affecting the InM process will be discussed. Successful transistor threshold voltage adjustment by ∼300 mV on high-kappa HfTaON/HfO2 dielectrics has also been demonstrated in TaN/Tb stack using this technique. © 2006 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83280
ISSN: 07413106
DOI: 10.1109/LED.2006.882569
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