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|Title:||Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process|
Dual work function (WF)
|Citation:||Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L. (2006). Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process. IEEE Electron Device Letters 27 (10) : 811-813. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.882569|
|Abstract:||This letter investigates the feasibility of adjusting the work function (WF) of TaN metal gate by intermixing (InM) of ultra-thin TaN/Metal stacks at high temperature. This could be useful for the integration of dual-WF metal gates in a gate-first CMOS process without exposing gate dielectric during metal-etching process. TaN/Tb and TaN/Ir stacks were studied, and it is found that the WF of TaN can be readily modulated through metal InM in TaN/Tb stack after high-temperature treatment (∼1000°C), which simulates the source/drain dopant activation process in a gate-first CMOS process. Factors affecting the InM process will be discussed. Successful transistor threshold voltage adjustment by ∼300 mV on high-kappa HfTaON/HfO2 dielectrics has also been demonstrated in TaN/Tb stack using this technique. © 2006 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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