Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2005.858999
Title: Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer
Authors: Kao, H.L.
Hung, B.F.
Chin, A. 
Lai, J.M.
Lee, C.F.
McAlister, S.P.
Chi, C.C.
Keywords: Associated gain
Metal-oxide semiconductor field-effect transistor (MOSFET)
Minimum noise figure
Plastic
Radio frequency (RF)
Issue Date: Nov-2005
Citation: Kao, H.L., Hung, B.F., Chin, A., Lai, J.M., Lee, C.F., McAlister, S.P., Chi, C.C. (2005-11). Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer. IEEE Microwave and Wireless Components Letters 15 (11) : 757-759. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2005.858999
Abstract: A very low minimum noise figure (N Fmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N Fmin and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic. © 2005 IEEE.
Source Title: IEEE Microwave and Wireless Components Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83260
ISSN: 15311309
DOI: 10.1109/LMWC.2005.858999
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