Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LMWC.2005.858999

Title:	Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer
Authors:	Kao, H.L. Hung, B.F. Chin, A. Lai, J.M. Lee, C.F. McAlister, S.P. Chi, C.C.
Keywords:	Associated gain Metal-oxide semiconductor field-effect transistor (MOSFET) Minimum noise figure Plastic Radio frequency (RF)
Issue Date:	Nov-2005
Citation:	Kao, H.L., Hung, B.F., Chin, A., Lai, J.M., Lee, C.F., McAlister, S.P., Chi, C.C. (2005-11). Very low noise RF nMOSFETs on pastic by substrate thinning and wafer transfer. IEEE Microwave and Wireless Components Letters 15 (11) : 757-759. ScholarBank@NUS Repository. https://doi.org/10.1109/LMWC.2005.858999
Abstract:	A very low minimum noise figure (N Fmin) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (∼ 30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB N Fmin and a 13.7-dB associated gain. Thesmall RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic. © 2005 IEEE.
Source Title:	IEEE Microwave and Wireless Components Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/83260
ISSN:	15311309
DOI:	10.1109/LMWC.2005.858999
Appears in Collections:	Staff Publications

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