Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2005.856708

Title:	Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric
Authors:	Chiang, K.C. Lai, C.H. Chin, A. Wang, T.J. Chiu, H.F. Chen, J.-R. McAlister, S.P. Chi, C.C.
Keywords:	Capacitor RF metal-insulator-metal (MIM) TaTiO
Issue Date:	Oct-2005
Citation:	Chiang, K.C., Lai, C.H., Chin, A., Wang, T.J., Chiu, H.F., Chen, J.-R., McAlister, S.P., Chi, C.C. (2005-10). Very high-density (23 fF/μm2) RF MIM capacitors using high-κ TaTiO as the dielectric. IEEE Electron Device Letters 26 (10) : 728-730. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2005.856708
Abstract:	A very high density of 23 fF/μm2 has been measured in RF metal-insulator-metal (MIM) capacitors which use high-κ TaTiO as the dielectric. In addition, the devices show a small reduction of 1.8% in the capacitance, from 100 kHz to 10 GHz. Together with these characteristics the MIM capacitors show low leakage currents and a small voltage-dependence of capacitance at 1 GHz. These TaTiO MIM capacitors should be useful for precision RF circuits. © 2005 IEEE.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/83259
ISSN:	07413106
DOI:	10.1109/LED.2005.856708
Appears in Collections:	Staff Publications

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