Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.008203esl
Title: Unipolar memristive switching in yttrium oxide and RESET current reduction using a yttrium interlayer
Authors: Pi, C.
Ren, Y.
Liu, Z.Q.
Chim, W.K. 
Issue Date: 2012
Citation: Pi, C., Ren, Y., Liu, Z.Q., Chim, W.K. (2012). Unipolar memristive switching in yttrium oxide and RESET current reduction using a yttrium interlayer. Electrochemical and Solid-State Letters 15 (3) : G5-G7. ScholarBank@NUS Repository. https://doi.org/10.1149/2.008203esl
Abstract: We report on the unipolar resistive switching (RS) phenomenon in yttrium oxide (Y 2O 3) metal-insulator-metal structures. The RS behavior for Y 2O 3 shows a superior ONOFF resistance ratio of greater than 10 6 and good memory retention reliability performance of at least 10 6 seconds at room temperature. By adding a thin yttrium (Y) layer to form a YY 2O 3 bilayer structure, a reduction in the RESET current by two orders of magnitude is achieved, which is advantageous in reducing the total switching energy consumption for resistive random access memory application. © 2011 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83251
ISSN: 10990062
DOI: 10.1149/2.008203esl
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