Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2019388
Title: Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors
Authors: Tan, K.-M.
Yang, M.
Liow, T.-Y.
Lee, R.T.P. 
Yeo, Y.-C. 
Keywords: Contact etch stop layer (CESL)
Diamond-like carbon (DLC)
FinFET
Multiple-gate
Strain
Issue Date: 2009
Citation: Tan, K.-M., Yang, M., Liow, T.-Y., Lee, R.T.P., Yeo, Y.-C. (2009). Ultra high-stress liner comprising diamond-like carbon for performance enhancement of p-channel multiple-gate transistors. IEEE Transactions on Electron Devices 56 (6) : 1277-1283. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2019388
Abstract: We report the demonstration of strained p-channel multiple-gate transistors or FinFETs with a novel liner-stressor material comprising diamond-like carbon (DLC). In this work, a DLC film with very high intrinsic compressive stress up to 6 GPa was employed. For FinFET devices having a 20 nm thin DLC liner stressor, more than 30% enhancement in saturation drain current IDsat is observed over FinFETs without a DLC liner. The performance enhancement is attributed to the coupling of compressive stress from the DLC liner to the channel, leading to hole mobility improvement. Due to its extremely high intrinsic stress value, significant IDsat enhancement is observed even when the thickness of the DLC film deposited is less than 40 nm. The DLC liner stressor is a promising stressor material for performance enhancement of p-channel transistors in future technology nodes. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83239
ISSN: 00189383
DOI: 10.1109/TED.2009.2019388
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