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|Title:||Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage|
RC time constant
|Citation:||Li, L.-J., Zhu, B., Ding, S.-J., Lu, H.-L., Sun, Q.-Q., Jiang, A., Zhang, D.W., Zhu, C. (2012). Three-dimensional AlZnO/Al2O3/AlZnO nanocapacitor arrays on Si substrate for energy storage. Nanoscale Research Letters 7 : 1-12. ScholarBank@NUS Repository. https://doi.org/10.1186/1556-276X-7-544|
|Abstract:||High density three-dimensional AZO/Al2O3/AZO nanocapacitor arrays have been fabricated for energy storage applications. Using atomic layer deposition technique, the stack of AZO/Al2O3/AZO has been grown in the porous anodic alumina template which is directly formed on the Si substrate. The fabricated capacitor shows a high capacitance density of 15.3 fF/μm2 at 100 kHz, which is nearly 2.5 times over the planar capacitor under identical conditions in theory. Further, the charge-discharge characteristics of the capacitor are characterized, indicating that the resistance-capacitance time constants are equal to 300 ns for the charging and discharging processes, and have no dependence on the voltage supply. This reflects good power characteristics of the electrostatic capacitor. © 2012 Li et al.|
|Source Title:||Nanoscale Research Letters|
|Appears in Collections:||Staff Publications|
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