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https://doi.org/10.1149/2.014206esl
| Title: | Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs | Authors: | Wang, L. Han, G. Su, S. Zhou, Q. Yang, Y. Guo, P. Wang, W. Tong, Y. Lim, P.S.Y. Liu, B. Kong, E.Y.-J. Xue, C. Wang, Q. Cheng, B. Yeo, Y.-C. |
Issue Date: | 2012 | Citation: | Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Liu, B., Kong, E.Y.-J., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C. (2012). Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs. Electrochemical and Solid-State Letters 15 (6) : H179-H181. ScholarBank@NUS Repository. https://doi.org/10.1149/2.014206esl | Abstract: | We demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide Ni(GeSn)Pt x(GeSn) y contacts are formed by reacting Ni-Pt alloy with Ge 0.947Sn 0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide Ni(GeSn) contacts, the Pt-incorporated contacts, i.e. Ni(GeSn)Pt x(GeSn) y, exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs. © 2012 The Electrochemical Society. | Source Title: | Electrochemical and Solid-State Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/83198 | ISSN: | 10990062 | DOI: | 10.1149/2.014206esl |
| Appears in Collections: | Staff Publications |
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