Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.014206esl
Title: Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs
Authors: Wang, L.
Han, G. 
Su, S.
Zhou, Q. 
Yang, Y.
Guo, P.
Wang, W.
Tong, Y.
Lim, P.S.Y.
Liu, B.
Kong, E.Y.-J.
Xue, C.
Wang, Q.
Cheng, B.
Yeo, Y.-C. 
Issue Date: 2012
Source: Wang, L., Han, G., Su, S., Zhou, Q., Yang, Y., Guo, P., Wang, W., Tong, Y., Lim, P.S.Y., Liu, B., Kong, E.Y.-J., Xue, C., Wang, Q., Cheng, B., Yeo, Y.-C. (2012). Thermally stable multi-phase nickel-platinum stanogermanide contacts for germanium-tin channel MOSFETs. Electrochemical and Solid-State Letters 15 (6) : H179-H181. ScholarBank@NUS Repository. https://doi.org/10.1149/2.014206esl
Abstract: We demonstrate a novel metal stanogermanide contact metallization process for high mobility germanium-tin (GeSn) channel MOSFETs. The multi-phase nickel-platinum stanogermanide Ni(GeSn)Pt x(GeSn) y contacts are formed by reacting Ni-Pt alloy with Ge 0.947Sn 0.053 alloy, which is epitaxially grown on Ge (100) substrate by solid source molecular beam epitaxy (MBE). Compared with nickel stanogermanide Ni(GeSn) contacts, the Pt-incorporated contacts, i.e. Ni(GeSn)Pt x(GeSn) y, exhibit enhanced thermal stability in a wide range of formation temperatures and have superior surface morphology even after thermal processing. The proposed contacts are attractive for the integration in high mobility GeSn MOSFETs. © 2012 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83198
ISSN: 10990062
DOI: 10.1149/2.014206esl
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