Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2009.2030873
Title: The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
Authors: Lee, R.T.P. 
Koh, A.T.-Y.
Tan, K.-M.
Liow, T.-Y.
Chi, D.Z.
Yeo, Y.-C. 
Keywords: Dysprosium
FinFET
Nickel silicide
Schottky barrier
Silicon:carbon
Issue Date: 2009
Citation: Lee, R.T.P., Koh, A.T.-Y., Tan, K.-M., Liow, T.-Y., Chi, D.Z., Yeo, Y.-C. (2009). The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors. IEEE Transactions on Electron Devices 56 (11) : 2770-2777. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2009.2030873
Abstract: We clarify the role of carbon and dysprosium in nickel-dysprosium-silicide (Ni[Dy]Si:C) contacts formed on silicon:carbon (Si1-y}Cy or Si:C) for Schottky-barrier height (SBH) reduction. Carbon-induced energy bandgap Eg narrowing and the segregation of dysprosium (Dy) at the Ni[Dy]Si:C/Si:C interface were shown to be responsible for SBH reduction in this paper. First, we show that electron barrier height (ΦB N) reduction of up to 69 meV (or 10.3%) for NiSi can be achieved with the scaling of substitutional carbon Csub concentration from 0% to 1.0%. Second, new evidence revealing the segregation of Dy-based interlayer at the Ni[Dy]Si:C/Si:C interface and an additional 321 meV (or 53%) reduction in ΦB N for NiSi:C are presented. This could be due to charge transfer at the Ni[Dy]Si:C/Si:C interface. The successful modulation of ΦB N for Ni[Dy]S:C translates to an effective 41% reduction in device REXT, resulting in improved drive current performance. This opens new avenues to optimize the Si1-yCy contact interface for extending transistor performance in future technological generations. © 2009 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83178
ISSN: 00189383
DOI: 10.1109/TED.2009.2030873
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