Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3475400
Title: The effects of cap layers on electrical properties of indium nitride films
Authors: Liu, W.
Tan, R.J.N.
Soh, C.B.
Chua, S.J. 
Issue Date: 26-Jul-2010
Citation: Liu, W., Tan, R.J.N., Soh, C.B., Chua, S.J. (2010-07-26). The effects of cap layers on electrical properties of indium nitride films. Applied Physics Letters 97 (4) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3475400
Abstract: The unintentional n-type doping in the indium nitride thin films was investigated. The electron density decreases from 3.5× 1019 to 9× 1018 cm-3 and the mobility increases from 4 to 457 cm2 V-1 s-1 when the thickness increases from 50 to 350 nm. This can be explained by assuming the film consists of a surface accumulation layer and a bulk layer. It was found that the accumulation layer can be eliminated by capping the surface with silicon nitride, GaN or zinc nitride of 2 nm each, respectively; while an AlN cap layer will cause the formation of two-dimensional electron gas at the AlN/InN interface. © 2010 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83167
ISSN: 00036951
DOI: 10.1063/1.3475400
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