Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.909999
Title: The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2
Authors: Yu, H.P.
Pey, K.L.
Choi, W.K. 
Dawood, M.K.
Chew, H.G.
Antoniadis, D.A.
Fitzgerald, E.A.
Chi, D.Z.
Keywords: High-κ
Metal gate
Metal gates
Ni germanide (NiGe)
Nickel
Workfunction tuning
Issue Date: Dec-2007
Citation: Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. (2007-12). The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2. IEEE Electron Device Letters 28 (12) : 1098-1101. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.909999
Abstract: In this letter, the tuning of a nickel fully germanided metal gate effective workfunction via a hyperthin yttrium (Y) interlayer at the bottom of the metal electrode was demonstrated on both SiO2 and HfO2. By varying the Y interlayer thickness from 0 to 9.6 nm, a full range of workfunction tuning from 5.11 to 3.65 eV has been achieved on NiGeY/SiO2 stacks. It was also found that the chemical potential of the material that is adjacent to the gate electrode/gate insulator plays an important role in the determination of the effective workfunction. This workfunction tuning window was observed to decrease to a range of 5.08-4.25 eV on NiGeY/HfO2 stacks. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83160
ISSN: 07413106
DOI: 10.1109/LED.2007.909999
Appears in Collections:Staff Publications

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