Please use this identifier to cite or link to this item:
|Title:||The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2|
Ni germanide (NiGe)
|Citation:||Yu, H.P., Pey, K.L., Choi, W.K., Dawood, M.K., Chew, H.G., Antoniadis, D.A., Fitzgerald, E.A., Chi, D.Z. (2007-12). The effect of an yttrium interlayer on a Ni germanided metal gate workfunction in SiO2/HfO2. IEEE Electron Device Letters 28 (12) : 1098-1101. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.909999|
|Abstract:||In this letter, the tuning of a nickel fully germanided metal gate effective workfunction via a hyperthin yttrium (Y) interlayer at the bottom of the metal electrode was demonstrated on both SiO2 and HfO2. By varying the Y interlayer thickness from 0 to 9.6 nm, a full range of workfunction tuning from 5.11 to 3.65 eV has been achieved on NiGeY/SiO2 stacks. It was also found that the chemical potential of the material that is adjacent to the gate electrode/gate insulator plays an important role in the determination of the effective workfunction. This workfunction tuning window was observed to decrease to a range of 5.08-4.25 eV on NiGeY/HfO2 stacks. © 2007 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 20, 2018
checked on Jun 8, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.