Please use this identifier to cite or link to this item:
|Title:||Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rate|
|Keywords:||Fast growth rate|
High dot density
|Citation:||Chia, C.K., Zhang, Y.W., Wong, S.S., Chua, S.J., Yong, A.M., Chow, S.Y. (2008-10). Testing the upper limit of InAs/GaAs self-organized quantum dots density by fast growth rate. Superlattices and Microstructures 44 (4-5) : 420-424. ScholarBank@NUS Repository. https://doi.org/10.1016/j.spmi.2007.10.007|
|Abstract:||We have examined the upper limit of the InAs/GaAs quantum dots (QDs) density by increasing the InAs deposition rate while keeping other growth conditions constant. By changing the InAs deposition rate from 0.1 to 3.6 monolayer/s (ML/s), the relationships between dot size, dot density and InAs deposition rates have been investigated. Nonlinear relationships were observed between dot density, dot size and InAs deposition rates, whereas photoluminescence intensity was found to be linearly dependence on dot density. For a 2.5 ML-thick InAs deposited on GaAs substrates by molecular-beam epitaxy, the highest dot density obtained was 7.8×1011/cm2. This high dot density QDs can be incorporated in device active region to enhance the device optical output. © 2007 Elsevier Ltd. All rights reserved.|
|Source Title:||Superlattices and Microstructures|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 14, 2018
WEB OF SCIENCETM
checked on Nov 7, 2018
checked on Oct 26, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.