Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.48.04C138
Title: Synthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxides
Authors: Sun, Z.-Q.
Whang, S.-J. 
Yang, W.-F.
Lee, S.-J. 
Issue Date: Apr-2009
Citation: Sun, Z.-Q., Whang, S.-J., Yang, W.-F., Lee, S.-J. (2009-04). Synthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxides. Japanese Journal of Applied Physics 48 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.48.04C138
Abstract: We synthesized nickel mono-silicide nanowires (NiSi-NWs) on electron-beam-evaporated Ni films with SiH4/H2 gases in a chemical-vapordeposition chamber, and studied the growth mechanism of NiSi-NW by investigating various synthesis conditions. Results show that NiO and Ni 2O3 phases coexist on nickel surface and agglomerate after heating and the initial growth of NiSi-NW is triggered by the Ni 2O3. The effects of these surface nickel-oxides on NiSi-NW growth were investigated, and a synthesis model based-on vapor-liquid-solid mechanism with the aid of nickel diffusion to initiate NiSi-NW synthesis is proposed. It is also found that the diameter of NiSi-NW is mainly controlled by the synthesis temperature and the activation energy of NiSi-NW formation is estimated to be 1.72 eV. © 2009 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83141
ISSN: 00214922
DOI: 10.1143/JJAP.48.04C138
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