Please use this identifier to cite or link to this item:
|Title:||Synthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxides|
|Citation:||Sun, Z.-Q., Whang, S.-J., Yang, W.-F., Lee, S.-J. (2009-04). Synthesis of nickel mono-silicide nanowire by chemical vapor deposition on nickel film: Role of surface nickel oxides. Japanese Journal of Applied Physics 48 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.48.04C138|
|Abstract:||We synthesized nickel mono-silicide nanowires (NiSi-NWs) on electron-beam-evaporated Ni films with SiH4/H2 gases in a chemical-vapordeposition chamber, and studied the growth mechanism of NiSi-NW by investigating various synthesis conditions. Results show that NiO and Ni 2O3 phases coexist on nickel surface and agglomerate after heating and the initial growth of NiSi-NW is triggered by the Ni 2O3. The effects of these surface nickel-oxides on NiSi-NW growth were investigated, and a synthesis model based-on vapor-liquid-solid mechanism with the aid of nickel diffusion to initiate NiSi-NW synthesis is proposed. It is also found that the diameter of NiSi-NW is mainly controlled by the synthesis temperature and the activation energy of NiSi-NW formation is estimated to be 1.72 eV. © 2009 The Japan Society of Applied Physics.|
|Source Title:||Japanese Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 17, 2018
WEB OF SCIENCETM
checked on Jun 27, 2018
checked on Jun 22, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.