Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.2005153
Title: Strained silicon nanowire transistors with germanium source and drain stressors
Authors: Liow, T.-Y.
Tan, K.-M.
Lee, R.T.P. 
Zhu, M. 
Tan, B.L.-H.
Balasubramanian, N.
Yeo, Y.-C. 
Keywords: Germanium stressors
Silicon-germanium stressors
Strained silicon nanowires
Issue Date: 2008
Citation: Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008). Strained silicon nanowire transistors with germanium source and drain stressors. IEEE Transactions on Electron Devices 55 (11) : 3048-3055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2005153
Abstract: We report the first demonstration of pure germanium (Ge) source/drain (S/ D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ∼100% IDsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si0.15Ge0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving ∼125% IDsat enhancement. © 2008 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83084
ISSN: 00189383
DOI: 10.1109/TED.2008.2005153
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