Strained silicon nanowire transistors with germanium source and drain stressors

Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2008.2005153

Title:	Strained silicon nanowire transistors with germanium source and drain stressors
Authors:	Liow, T.-Y. Tan, K.-M. Lee, R.T.P. Zhu, M. Tan, B.L.-H. Balasubramanian, N. Yeo, Y.-C.
Keywords:	Germanium stressors Silicon-germanium stressors Strained silicon nanowires
Issue Date:	2008
Citation:	Liow, T.-Y., Tan, K.-M., Lee, R.T.P., Zhu, M., Tan, B.L.-H., Balasubramanian, N., Yeo, Y.-C. (2008). Strained silicon nanowire transistors with germanium source and drain stressors. IEEE Transactions on Electron Devices 55 (11) : 3048-3055. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2008.2005153
Abstract:	We report the first demonstration of pure germanium (Ge) source/drain (S/ D) stressors on the ultranarrow or ultrathin Si S/D regions of nanowire FETs with gate lengths down to 5 nm. Ge S/D compressively strains the channel to provide up to ∼100% IDsat enhancement. We also introduce a novel Melt-Enhanced Dopant diffusion and activation technique to form fully embedded Si0.15Ge0.85 S/D stressors in nanowire FETs, further boosting the channel strain and achieving ∼125% IDsat enhancement. © 2008 IEEE.
Source Title:	IEEE Transactions on Electron Devices
URI:	http://scholarbank.nus.edu.sg/handle/10635/83084
ISSN:	00189383
DOI:	10.1109/TED.2008.2005153
Appears in Collections:	Staff Publications

There are no files associated with this item.

Check