Please use this identifier to cite or link to this item:
|Title:||Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K., Feng, W., Bera, L.K., Yang, C.Y., Mi, J. (2001-12). Spectroscopic ellipsometry and electrical studies of as-grown and rapid thermal oxidized Si1-x-yGexCy films. Journal of Applied Physics 90 (11) : 5819-5824. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1413715|
|Abstract:||Transmission electron microscopy results showed the formation of SiC precipitation in a rapid thermally oxidized (RTO) Si1-x-yGexCy sample with high-C content. The spectroscopic ellipsometry results showed that the E1 gap increased and E2 gap decreased as the C concentration increased. For the oxidized samples, the amplitude of the E2 transitions reduced rapidly and the E1 transition shifted to a lower energy. The reduction in the E2 transitions was due to the presence of the oxide layer. A high-Ge content layer and the low-C content in the RTO films accounted for the E1 shift to lower energy. The electrical measurements showed that RTO at 800°C did not improve the oxide quality as compared to 1000°C. © 2001 American Institute of Physics.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Oct 15, 2018
WEB OF SCIENCETM
checked on Oct 8, 2018
checked on Sep 14, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.