Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/23/1/015012
Title: Simulation and design of a germanium L-shaped impact-ionization MOS transistor
Authors: Toh, E.-H.
Wang, G.H.
Chan, L.
Samudra, G. 
Yeo, Y.-C. 
Issue Date: 1-Jan-2008
Citation: Toh, E.-H., Wang, G.H., Chan, L., Samudra, G., Yeo, Y.-C. (2008-01-01). Simulation and design of a germanium L-shaped impact-ionization MOS transistor. Semiconductor Science and Technology 23 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/23/1/015012
Abstract: This paper reports a novel L-shaped impact-ionization MOS (LI-MOS) transistor structure that achieves a subthreshold swing of well below 60 mV/decade at room temperature and operates at a low supply voltage. The device features an L-shaped or an elevated impact-ionization region (I-region), which displaces the hot carrier activity away from the gate dielectric region to improve hot carrier reliability and VT stability problems. Germanium, which has a lower bandgap and impact-ionization threshold energy lower than silicon, is chosen as the material of choice for the LI-MOS transistor structure. Device physics and design principles for the LI-MOS transistor are detailed through extensive two-dimensional device simulations. The LI-MOS transistor exhibits excellent scalability, making it suitable for augmenting the performance of standard CMOS transistors in future technology generations. © 2008 IOP Publishing Ltd.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/83025
ISSN: 02681242
DOI: 10.1088/0268-1242/23/1/015012
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