Please use this identifier to cite or link to this item: https://doi.org/10.1149/2.072204jes
Title: Silicon-carbon source and drain stressors: Carbon profile design by ion implantation
Authors: Zhou, Q. 
Koh, S.-M.
Tong, Y.
Henry, T.
Erokhin, Y.
Yeo, Y.-C. 
Issue Date: 2012
Source: Zhou, Q., Koh, S.-M., Tong, Y., Henry, T., Erokhin, Y., Yeo, Y.-C. (2012). Silicon-carbon source and drain stressors: Carbon profile design by ion implantation. Journal of the Electrochemical Society 159 (4) : H425-H432. ScholarBank@NUS Repository. https://doi.org/10.1149/2.072204jes
Abstract: We investigated Si:C SD stressors having a retrograde carbon profile formed by carbon ion implantation and solid phase epitaxy (SPE). The retrograde carbon profile features a 30-nm-thick buried silicon carbon (Si:C) layer that is spatially decoupled from a 10-nm-thick surface layer with high phosphorus concentration. Retrograde carbon profile can increase the dopant activation rate in the Si:C SD stressors and achieves more than 30% reduction of sheet resistance (R s) when SPE temperature is lower than 800°C. Samples with retrograde carbon profile have a lower R s for a given substitutional carbon concentration compared to the uniform carbon profile samples. Nickel monosilicide (NiSi) formed on Si:C SD with a retrograde carbon profile has a R s which ∼10 lower than that formed on Si:C with uniform C profile. © 2012 The Electrochemical Society.
Source Title: Journal of the Electrochemical Society
URI: http://scholarbank.nus.edu.sg/handle/10635/83022
ISSN: 00134651
DOI: 10.1149/2.072204jes
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