Please use this identifier to cite or link to this item: https://doi.org/10.1002/pip.866
Title: Shunting problems due to sub-micron pinholes in evaporated solid-phase crystallised poly-Si thin-film solar cells on glass
Authors: Kunz, O.
Wong, J.
Janssens, J.
Bauer, J.
Breitenstein, O.
Aberle, A.G. 
Keywords: Lock-in thermography
Metallisation
Polycrystalline silicon
Shunting
Solid-phase crystallisation
Thin-film solar cells
Issue Date: Jan-2009
Citation: Kunz, O., Wong, J., Janssens, J., Bauer, J., Breitenstein, O., Aberle, A.G. (2009-01). Shunting problems due to sub-micron pinholes in evaporated solid-phase crystallised poly-Si thin-film solar cells on glass. Progress in Photovoltaics: Research and Applications 17 (1) : 35-46. ScholarBank@NUS Repository. https://doi.org/10.1002/pip.866
Abstract: Recent progress in the metallisation of poly-silicon thin-film solar cells on glass, created by solid phase crystallisation (SPC) of evaporated amorphous silicon (EVA), revealed that shunting through sub-micron holes (density 100-200 mm-2) in the films causes severe shunting problems when the air-side metal contact is deposited onto these diodes, by creating effective shunting paths between the two highly doped layers of EVA cells. We present evidence of these pinholes by optical transmission and focussed ion beam (FIB) microscopic images and confirm the point-like pinhole shunts using lock-in thermographic images. The latter revealed that the Al rear electrode induces strong ohmic shunts below the grid lines and a high density of weak nonlinear shunts away from the grid lines. Two distinctly different approaches are shown to reduce the shunting problem to a negligible level: (i) to contact only a small fraction of the rear Si surface via a point contacting scheme, whereby the metal layer needs to be thin (
Source Title: Progress in Photovoltaics: Research and Applications
URI: http://scholarbank.nus.edu.sg/handle/10635/83014
ISSN: 10627995
DOI: 10.1002/pip.866
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