Please use this identifier to cite or link to this item: https://doi.org/10.1143/JJAP.49.04DN07
Title: Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructure
Authors: Koong, C.S.
Samudra, G. 
Liang, G. 
Issue Date: Apr-2010
Citation: Koong, C.S., Samudra, G., Liang, G. (2010-04). Shape effects on the performance of Si and Ge nanowire field-effect transistors based on size dependent bandstructure. Japanese Journal of Applied Physics 49 (4 PART 2) : -. ScholarBank@NUS Repository. https://doi.org/10.1143/JJAP.49.04DN07
Abstract: In this paper, we evaulated the shape and size effects of Si and Ge nanowire (NW) field-effect transistors (FETs) on device performance using sp3d5s* tight-binding (TB) model and semi-classical top-of-barrier ballistic transport model. Our simulation results show that smaller cross-sectional area is desirable for high frequency device applications and for larger ON-state currents, square cross-section may be desirable due to larger cross-sectional area and insulator capacitance. Furthermore, it is also observed that due to quantum effects, the gate capacitance to gate oxide capacitance (Cg/Cox) ratio for the small size NW FETs could be much less than one, rendering the classical assumptions and calculations invalid for nano scale FETs. In this sub-nano region, therefore, a new set of assumptions and calculations in terms of effective mass, bandgap, and one-dimensional density-of-states should be implemented as quantum effects start to play an important role in device performance. © 2010 The Japan Society of Applied Physics.
Source Title: Japanese Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/83011
ISSN: 00214922
DOI: 10.1143/JJAP.49.04DN07
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