Please use this identifier to cite or link to this item:
https://doi.org/10.1109/TED.2012.2223821
Title: | Self-selection unipolar HfOx-Based RRAM |
Authors: | Tran, X.A. Zhu, W. Liu, W.J. Yeo, Y.C. Nguyen, B.Y. Yu, H.Y. |
Keywords: | Bipolar high resistance switching (HRS) low resistance switching (LRS) resistive switching (RS) unipolar |
Issue Date: | 2013 |
Source: | Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y. (2013). Self-selection unipolar HfOx-Based RRAM. IEEE Transactions on Electron Devices 60 (1) : 391-395. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2223821 |
Abstract: | In this paper, we study the effect of highly doped n+/p + Si as the bottom electrode on unipolar RRAM with Ni-electrode/HfOx structure. With heavily doped p+-Si as the bottom electrode, RRAM devices illustrate the coexistence of the bipolar and the unipolar resistive switching. Meanwhile, by substituting heavily doped ${\rm n}+-Si, the switching behavior changes to that of the self-rectifying unipolar device. The asymmetry and rectifying reproducible behavior in a n+-Si/HfOx/Ni device resulted from the Schottky barrier of defect states in the SiOx/HfOx junction and n+ Si substrate, but this behavior is not seen for the p+-Si bottom electrode case. With rectifying characteristics and high forward current density observed in the Ni/HfOx/n+Si device, the sneak current path in the conventional crossbar architecture was significantly suppressed. We believe that the proposed structure is a promising candidate for future crossbar-type RRAM applications. © 2012 IEEE. |
Source Title: | IEEE Transactions on Electron Devices |
URI: | http://scholarbank.nus.edu.sg/handle/10635/83008 |
ISSN: | 00189383 |
DOI: | 10.1109/TED.2012.2223821 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
SCOPUSTM
Citations
22
checked on Mar 13, 2018
WEB OF SCIENCETM
Citations
21
checked on Mar 13, 2018
Page view(s)
31
checked on Mar 11, 2018
Google ScholarTM
Check
Altmetric
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.