Please use this identifier to cite or link to this item: https://doi.org/10.1109/TED.2012.2223821
Title: Self-selection unipolar HfOx-Based RRAM
Authors: Tran, X.A.
Zhu, W.
Liu, W.J.
Yeo, Y.C. 
Nguyen, B.Y.
Yu, H.Y.
Keywords: Bipolar
high resistance switching (HRS)
low resistance switching (LRS)
resistive switching (RS)
unipolar
Issue Date: 2013
Citation: Tran, X.A., Zhu, W., Liu, W.J., Yeo, Y.C., Nguyen, B.Y., Yu, H.Y. (2013). Self-selection unipolar HfOx-Based RRAM. IEEE Transactions on Electron Devices 60 (1) : 391-395. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2012.2223821
Abstract: In this paper, we study the effect of highly doped n+/p + Si as the bottom electrode on unipolar RRAM with Ni-electrode/HfOx structure. With heavily doped p+-Si as the bottom electrode, RRAM devices illustrate the coexistence of the bipolar and the unipolar resistive switching. Meanwhile, by substituting heavily doped ${\rm n}+-Si, the switching behavior changes to that of the self-rectifying unipolar device. The asymmetry and rectifying reproducible behavior in a n+-Si/HfOx/Ni device resulted from the Schottky barrier of defect states in the SiOx/HfOx junction and n+ Si substrate, but this behavior is not seen for the p+-Si bottom electrode case. With rectifying characteristics and high forward current density observed in the Ni/HfOx/n+Si device, the sneak current path in the conventional crossbar architecture was significantly suppressed. We believe that the proposed structure is a promising candidate for future crossbar-type RRAM applications. © 2012 IEEE.
Source Title: IEEE Transactions on Electron Devices
URI: http://scholarbank.nus.edu.sg/handle/10635/83008
ISSN: 00189383
DOI: 10.1109/TED.2012.2223821
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