Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3645018
Title: Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal
Authors: Koh, S.-M.
Wang, X.
Thanigaivelan, T.
Henry, T.
Erokhin, Y.
Samudra, G.S. 
Yeo, Y.-C. 
Issue Date: 1-Oct-2011
Citation: Koh, S.-M.,Wang, X.,Thanigaivelan, T.,Henry, T.,Erokhin, Y.,Samudra, G.S.,Yeo, Y.-C. (2011-10-01). Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal. Journal of Applied Physics 110 (7) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3645018
Abstract: We investigate the tuning of Schottky barrier height (SBH) of nickel silicide formed by pulsed excimer laser anneal of nickel on silicon implanted with aluminum (Al). A wide range of laser fluence was investigated, and it has been found that laser fluence influences the distribution of Al within the silicide and at the silicide/silicon interface. This in turn affects the effective whole SBH (φB p) at the silicide/silicon junction. High Al concentration at the silicide/silicon interface and high temperature for nano-second duration to achieve Al activation while keeping the Al concentration within the silicide low is vital for achieving low φB p. We demonstrate the achievement of one of the lowest reported φB p of ∼0.11 eV. This introduces a new option for forming nickel silicide contacts with reduced contact resistance at low thermal budget for possible adoption in future metal-oxide-semiconductor transistor technologies. © 2011 American Institute of Physics.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82999
ISSN: 00218979
DOI: 10.1063/1.3645018
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