Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2034111
Title: Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs
Authors: Sinha, M.
Lee, R.T.P. 
Chor, E.F. 
Yeo, Y.-C. 
Keywords: Aluminum implant
Contact resistance
FinFETs
Nickel (Ni)-dysprosium (Dy)-alloy germanosilicide (NiDySiGe)
Schottky barrier height
Issue Date: Dec-2009
Source: Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C. (2009-12). Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs. IEEE Electron Device Letters 30 (12) : 1278-1280. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2034111
Abstract: This letter reports on the fabrication and hole Schottky barrier Φp p modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide (NiDySiGe) on silicongermanium (SiGe). Aluminum (Al) implant is utilized to lower the Φp p of NiDySiGe from ̃0.5 to ̃0.12 eV, with a correspondingly increasing Al dose in the range of 0-2 × 1015 atoms/cm2. When integrated as the contact silicide in p-FinFETs (with SiGe source/drain), NiDySiGe with an Al implant dose of 2 × 1014 atoms cm2 leads to 32% enhancement in IDSAT over p-FinFETs with conventional NiSiGe contacts. NiDy-alloy silicide is a promising single silicide solution for series-resistance reduction in CMOS FinFETs. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82998
ISSN: 07413106
DOI: 10.1109/LED.2009.2034111
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