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https://doi.org/10.1109/LED.2009.2034111
| Title: | Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs | Authors: | Sinha, M. Lee, R.T.P. Chor, E.F. Yeo, Y.-C. |
Keywords: | Aluminum implant Contact resistance FinFETs Nickel (Ni)-dysprosium (Dy)-alloy germanosilicide (NiDySiGe) Schottky barrier height |
Issue Date: | Dec-2009 | Citation: | Sinha, M., Lee, R.T.P., Chor, E.F., Yeo, Y.-C. (2009-12). Schottky barrier height modulation of nickeldysprosium-alloy germanosilicide contacts for strained P-FinFETs. IEEE Electron Device Letters 30 (12) : 1278-1280. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2034111 | Abstract: | This letter reports on the fabrication and hole Schottky barrier Φp p modulation of a novel nickel (Ni)dysprosium (Dy)-alloy germanosilicide (NiDySiGe) on silicongermanium (SiGe). Aluminum (Al) implant is utilized to lower the Φp p of NiDySiGe from ̃0.5 to ̃0.12 eV, with a correspondingly increasing Al dose in the range of 0-2 × 1015 atoms/cm2. When integrated as the contact silicide in p-FinFETs (with SiGe source/drain), NiDySiGe with an Al implant dose of 2 × 1014 atoms cm2 leads to 32% enhancement in IDSAT over p-FinFETs with conventional NiSiGe contacts. NiDy-alloy silicide is a promising single silicide solution for series-resistance reduction in CMOS FinFETs. © 2009 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82998 | ISSN: | 07413106 | DOI: | 10.1109/LED.2009.2034111 |
| Appears in Collections: | Staff Publications |
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