Please use this identifier to cite or link to this item:
|Title:||Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching|
|Citation:||Liu, Z.Q., Leusink, D.P., Lü, W.M., Wang, X., Yang, X.P., Gopinadhan, K., Lin, Y.T., Annadi, A., Zhao, Y.L., Barman, A.R., Dhar, S., Feng, Y.P., Su, H.B., Xiong, G., Venkatesan, T., Ariando (2011-10-07). Reversible metal-insulator transition in LaAlO3 thin films mediated by intragap defects: An alternative mechanism for resistive switching. Physical Review B - Condensed Matter and Materials Physics 84 (16) : -. ScholarBank@NUS Repository. https://doi.org/10.1103/PhysRevB.84.165106|
|Abstract:||We report on the electric-field-induced reversible metal-insulator transition (MIT) of the insulating LaAlO3 thin films observed in metal/LaAlO3/Nb-SrTiO3 heterostructures. The switching voltage depends strongly on the thickness of the LaAlO3 thin film which indicates that a minimum thickness is required for the MIT. A constant opposing voltage is required to deplete the charges from the defect states. Our experimental results exclude the possibility of diffusion of the metal electrodes or oxygen vacancies into the LaAlO3 layer. Instead, the phenomenon is attributed to the formation of a quasi-conduction band (QCB) in the defect states of LaAlO3 that forms a continuum state with the conduction band of the Nb-SrTiO3. Once this continuum (metallic) state is formed, the state remains stable even when the voltage bias is turned off. The thickness dependent reverse switch-on voltage and the constant forward switch-off voltage are consistent with our model. The viewpoint proposed here can provide an alternative mechanism for resistive switching in complex oxides. © 2011 American Physical Society.|
|Source Title:||Physical Review B - Condensed Matter and Materials Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 17, 2019
WEB OF SCIENCETM
checked on Mar 6, 2019
checked on Mar 9, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.