Reliability of ultrathin (
Samanta, S.K. Chatterjee, S. Choi, W.K. Bera, L.K. Banerjee, H.D. Maiti, C.K.
Samanta, S.K.
Chatterjee, S.
Choi, W.K.
Banerjee, H.D.
Maiti, C.K.
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Abstract
The reliability of ultrathin oxides on strained SiGe heterolayers was discussed. The effects of nitrogen (N2)-annealing on the electrical properties and reliability of the nitrogen oxide (N2O)-grown oxynitrides were also examined. The results showed that the thermal stability of the lattice structure of SiGe was preserved for 800-950 °C oxidation.
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Semiconductor Science and Technology
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Series/Report No.
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Date
2003-01
DOI
10.1088/0268-1242/18/1/305
Type
Article