Please use this identifier to cite or link to this item: https://doi.org/10.1088/0268-1242/18/1/305
Title: Reliability of ultrathin (
Authors: Samanta, S.K.
Chatterjee, S.
Choi, W.K.
Bera, L.K. 
Banerjee, H.D.
Maiti, C.K.
Issue Date: Jan-2003
Citation: Samanta, S.K., Chatterjee, S., Choi, W.K., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2003-01). Reliability of ultrathin (. Semiconductor Science and Technology 18 (1) : 33-38. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/18/1/305
Abstract: The reliability of ultrathin oxides on strained SiGe heterolayers was discussed. The effects of nitrogen (N2)-annealing on the electrical properties and reliability of the nitrogen oxide (N2O)-grown oxynitrides were also examined. The results showed that the thermal stability of the lattice structure of SiGe was preserved for 800-950 °C oxidation.
Source Title: Semiconductor Science and Technology
URI: http://scholarbank.nus.edu.sg/handle/10635/82976
ISSN: 02681242
DOI: 10.1088/0268-1242/18/1/305
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