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https://doi.org/10.1088/0268-1242/18/1/305
| Title: | Reliability of ultrathin ( | Authors: | Samanta, S.K. Chatterjee, S. Choi, W.K. Bera, L.K. Banerjee, H.D. Maiti, C.K. |
Issue Date: | Jan-2003 | Citation: | Samanta, S.K., Chatterjee, S., Choi, W.K., Bera, L.K., Banerjee, H.D., Maiti, C.K. (2003-01). Reliability of ultrathin (. Semiconductor Science and Technology 18 (1) : 33-38. ScholarBank@NUS Repository. https://doi.org/10.1088/0268-1242/18/1/305 | Abstract: | The reliability of ultrathin oxides on strained SiGe heterolayers was discussed. The effects of nitrogen (N2)-annealing on the electrical properties and reliability of the nitrogen oxide (N2O)-grown oxynitrides were also examined. The results showed that the thermal stability of the lattice structure of SiGe was preserved for 800-950 °C oxidation. | Source Title: | Semiconductor Science and Technology | URI: | http://scholarbank.nus.edu.sg/handle/10635/82976 | ISSN: | 02681242 | DOI: | 10.1088/0268-1242/18/1/305 |
| Appears in Collections: | Staff Publications |
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