Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization

Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3559754

Title:	Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization
Authors:	Zhang, X. Guo, H. Lin, H.-Y. Ivana Gong, X. Zhou, Q. Lin, Y.-R. Ko, C.-H. Wann, C.H. Yeo, Y.-C.
Issue Date:	2011
Citation:	Zhang, X., Guo, H., Lin, H.-Y., Ivana, Gong, X., Zhou, Q., Lin, Y.-R., Ko, C.-H., Wann, C.H., Yeo, Y.-C. (2011). Reduction of off-state leakage current in In0.7Ga 0.3As channel n-MOSFETs with self-aligned Ni-InGaAs contact metallization. Electrochemical and Solid-State Letters 14 (5) : H212-H214. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3559754
Abstract:	In0.7Ga0.3As channel n-MOSFETs (metal-oxide- semiconductor field-effect transistors) with Si-doped S/D and self-aligned Ni-InGaAs contact were demonstrated for the first time. The salicide-like metallization process employed a direct reaction between Ni and Si-doped InGaAs, followed by the removal of the unreacted Ni. As compared with n-MOSFETs with metallic Ni-InGaAs S/D (i.e. no Si doping in S/D), n-MOSFETs with Ni-InGaAs contact formed on Si-doped S/D show significantly improved OFF-state current IOFF in the linear and saturation regions. © 2011 The Electrochemical Society. All rights reserved.
Source Title:	Electrochemical and Solid-State Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82972
ISSN:	10990062
DOI:	10.1149/1.3559754
Appears in Collections:	Staff Publications

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