Please use this identifier to cite or link to this item:
|Title:||Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology|
|Source:||Yang, R., Loh, W.Y., Yu, M.B., Xiong, Y-.Z., Choy, S.F., Jiang, Y., Chan, D.S.H., Lim, Y.F., Bera, L.K., Wong, L.Y., Li, W.H., Du, A.Y., Tung, C.H., Hoe, K.M., Lo, G.Q., Balasubramanian, N., Kwong, D.-L. (2006). Reduction of leakage and low-frequency noise in MOS transistors through two-step RTA of NiSi-Silicide technology. IEEE Electron Device Letters 27 (10) : 824-826. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.882567|
|Abstract:||A two-step rapid thermal annealing (RTA) nickel salicidation process was employed to fabricate 0.1-mum gate length CMOS transistors. Excess salicidation, common in the conventional one-step RTA NiSi process, is effectively suppressed by this approach, which is confirmed by transmission electron microscopy (TEM) images. More improvements due to two-step NiSi are observed in NMOS than in PMOS transistors: The n+-p junction diode with two-step NiSi exhibits lower reverse leakage and higher breakdown voltage than the one-step silicided diode. For the first time, it is found that two-step NiSi NMOS exhibits significant reduction in off-state leakage (∼5×) and low-frequency noise (up to two orders of magnitude) over one-step NiSi NMOS, although there is not much difference in PMOS transistors.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jan 24, 2018
WEB OF SCIENCETM
checked on Nov 19, 2017
checked on Jan 21, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.