Please use this identifier to cite or link to this item: https://doi.org/10.1088/0957-4484/15/5/043
Title: Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon
Authors: Zeng, Y.P.
Lu, Y.F.
Shen, Z.X. 
Sun, W.X. 
Yu, T. 
Liu, L. 
Zeng, J.N. 
Cho, B.J. 
Poon, C.H.
Issue Date: May-2004
Citation: Zeng, Y.P., Lu, Y.F., Shen, Z.X., Sun, W.X., Yu, T., Liu, L., Zeng, J.N., Cho, B.J., Poon, C.H. (2004-05). Raman spectroscopy investigation on excimer laser annealing and thickness determination of nanoscale amorphous silicon. Nanotechnology 15 (5) : 658-662. ScholarBank@NUS Repository. https://doi.org/10.1088/0957-4484/15/5/043
Abstract: Raman spectroscopy was used to investigate excimer laser annealing and thickness determination of amorphous silicon (a-Si) layers which are less than 20 nm thick. The a-Si layers were produced on silicon (Si) substrates using Si+ ion implantation with an energy of 10 keV and a dose of 1 × 1015 cm-2. Excimer laser annealing was applied to re-crystallize the a-Si layers. The dependence of re-crystallization on laser fluence was investigated using Raman spectroscopy. A threshold laser fluence of 0.4 J cm-2 was required to re-crystallize the a-Si layers. In Raman spectroscopy, the Raman intensity shows a periodical variation with a period of 90° as a function of the angle between the Si orientation and the laser polarization. Based on this phenomenon, a method to determine nanoscale a-Si film thickness was proposed in two ways. One way was carried out without sample rotation to determine the a-Si thickness provided that the reference c-Si and a-Si/c-Si samples are in the same crystal orientation. The other way was carried out with sample rotation to determine the a-Si thickness without knowing the crystal orientation beforehand.
Source Title: Nanotechnology
URI: http://scholarbank.nus.edu.sg/handle/10635/82961
ISSN: 09574484
DOI: 10.1088/0957-4484/15/5/043
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