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|Title:||Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As|
|Citation:||Ivana, Pan, J., Zhang, Z., Zhang, X., Guo, H., Gong, X., Yeo, Y.-C. (2011-07-04). Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In0.53Ga0.47As. Applied Physics Letters 99 (1) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3607959|
|Abstract:||The work function of Ni-InGaAs and the band alignment between Ni-InGaAs and In0.53Ga0.47As were investigated using photoelectron spectroscopy. The vacuum work function of Ni-InGaAs is obtained to be ∼5.1 eV using ultraviolet photoelectron spectroscopy (UPS). In addition, it was observed that the Fermi level of Ni-InGaAs is aligned to near conduction band of In0.53Ga0.47As at interface. For Ni-InGaAs formed on p-type In0.53Ga0.47As, this gives a Schottky contact with a hole barrier height of 0.8 ± 0.1 eV. Ni-InGaAs would form an ohmic contact on n-type In0.53Ga0.47As. © 2011 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
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