Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4862310
Title: Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions
Authors: Chen, B.J.
Tan, S.G. 
Issue Date: 2014
Citation: Chen, B.J., Tan, S.G. (2014). Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions. Journal of Applied Physics 115 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4862310
Abstract: We investigate the barrier imperfection and interfacial scattering effects on resistance-area product (RA) and tunneling magnetoresistance (TMR) of magnesium oxide (MgO) based magnetic tunneling junction (MTJ). We assume that barrier imperfection reduces the band gap of MgO; thus, it affects both TMR and RA values. The lattice mismatch between MgO and magnetic electrodes leads to interface scattering which reduces TMR. As an application, the MTJ two-state resistance variations due to the process variations are also discussed in the paper. © 2014 AIP Publishing LLC.
Source Title: Journal of Applied Physics
URI: http://scholarbank.nus.edu.sg/handle/10635/82889
ISSN: 00218979
DOI: 10.1063/1.4862310
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

27
checked on May 18, 2018

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.