Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.4862310

Title:	Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions
Authors:	Chen, B.J. Tan, S.G.
Issue Date:	2014
Citation:	Chen, B.J., Tan, S.G. (2014). Phenomenological study of barrier imperfection and interfacial scattering on MgO based tunnel junctions. Journal of Applied Physics 115 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.4862310
Abstract:	We investigate the barrier imperfection and interfacial scattering effects on resistance-area product (RA) and tunneling magnetoresistance (TMR) of magnesium oxide (MgO) based magnetic tunneling junction (MTJ). We assume that barrier imperfection reduces the band gap of MgO; thus, it affects both TMR and RA values. The lattice mismatch between MgO and magnetic electrodes leads to interface scattering which reduces TMR. As an application, the MTJ two-state resistance variations due to the process variations are also discussed in the paper. © 2014 AIP Publishing LLC.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/82889
ISSN:	00218979
DOI:	10.1063/1.4862310
Appears in Collections:	Staff Publications

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