Please use this identifier to cite or link to this item: https://doi.org/10.1021/nl062596f
Title: Performance analysis of a Ge/Si core/shell nanowire field-effect transistor
Authors: Liang, G. 
Xiang, J.
Kharche, N.
Klimeck, G.
Lieber, C.M.
Lundstrom, M.
Issue Date: Mar-2007
Citation: Liang, G., Xiang, J., Kharche, N., Klimeck, G., Lieber, C.M., Lundstrom, M. (2007-03). Performance analysis of a Ge/Si core/shell nanowire field-effect transistor. Nano Letters 7 (3) : 642-646. ScholarBank@NUS Repository. https://doi.org/10.1021/nl062596f
Abstract: We ana/lyze the performance of a recently reported Ge/Si core/shell nanowire transistor using a semiclassical, ballistic transport model and an sp3d5s* tight-binding treatment of the electronic structure. Comparison of the measured performance of the device with the effects of series resistance removed to the simulated result assuming ballistic transport shows that the experimental device operates between 60 and 85% of the ballistic limit. For this ∼15 nm diameter Ge nanowire, we also find that 14-18 modes are occupied at room temperature under ON-current conditions with ION/IOFF = 100. To observe true one-dimensional transport in a 〈110〉 Ge nanowire transistor, the nanowire diameter would have to be less than about 5 nm. The methodology described here should prove useful for analyzing and comparing on a common basis nanowire transistors of various materials and structures. © 2007 American Chemical Society.
Source Title: Nano Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82869
ISSN: 15306984
DOI: 10.1021/nl062596f
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