Please use this identifier to cite or link to this item:
|Title:||Palladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrate|
|Citation:||Xie, R., Phung, T.H., Yu, M., Oh, S.A., Tripathy, S., Zhu, C. (2009). Palladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrate. Electrochemical and Solid-State Letters 12 (7) : H266-H268. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3126496|
|Abstract:||In this article, metal (palladium, Pd)-induced lateral crystallization (MILC) of amorphous-germanium (α-Ge) films prepared by room-temperature sputtering on an insulating material (SiO2) is observed and investigated using micro-Raman microscopy and transmission electron microscopy. The planar α-Ge thin films were annealed at 300, 350, and 400°C in a N2 ambient. The MILC phenomenon is not observed for the samples annealed at 300°C for 2 h, while the MILC phenomenon is observed for α-Ge films annealed at 350 and 400°C for 2 h with a lateral growth rate of ∼1.1 and 1.3 μm/h, respectively. A poly-Ge film with a 400°C annealing temperature exhibits a smaller full width at half-maximum and a higher intensity of the sharp c-Ge peak than that annealed at 350°C, which can be the promising material candidate for Si-based three-dimensional integrated circuit applications. © 2009 The Electrochemical Society.|
|Source Title:||Electrochemical and Solid-State Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 13, 2018
WEB OF SCIENCETM
checked on Nov 5, 2018
checked on Nov 9, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.