Please use this identifier to cite or link to this item: https://doi.org/10.1149/1.3126496
Title: Palladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrate
Authors: Xie, R.
Phung, T.H.
Yu, M.
Oh, S.A.
Tripathy, S.
Zhu, C. 
Issue Date: 2009
Citation: Xie, R., Phung, T.H., Yu, M., Oh, S.A., Tripathy, S., Zhu, C. (2009). Palladium-induced lateral crystallization of amorphous-germanium thin film on insulating substrate. Electrochemical and Solid-State Letters 12 (7) : H266-H268. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3126496
Abstract: In this article, metal (palladium, Pd)-induced lateral crystallization (MILC) of amorphous-germanium (α-Ge) films prepared by room-temperature sputtering on an insulating material (SiO2) is observed and investigated using micro-Raman microscopy and transmission electron microscopy. The planar α-Ge thin films were annealed at 300, 350, and 400°C in a N2 ambient. The MILC phenomenon is not observed for the samples annealed at 300°C for 2 h, while the MILC phenomenon is observed for α-Ge films annealed at 350 and 400°C for 2 h with a lateral growth rate of ∼1.1 and 1.3 μm/h, respectively. A poly-Ge film with a 400°C annealing temperature exhibits a smaller full width at half-maximum and a higher intensity of the sharp c-Ge peak than that annealed at 350°C, which can be the promising material candidate for Si-based three-dimensional integrated circuit applications. © 2009 The Electrochemical Society.
Source Title: Electrochemical and Solid-State Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82861
ISSN: 10990062
DOI: 10.1149/1.3126496
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