Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1645639

Title:	Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?
Authors:	Kan, E.W.H. Choi, W.K. Chim, W.K. Fitzgerald, E.A. Antoniadis, D.A.
Issue Date:	15-Mar-2004
Citation:	Kan, E.W.H., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Antoniadis, D.A. (2004-03-15). Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?. Journal of Applied Physics 95 (6) : 3148-3152. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1645639
Abstract:	The thermal oxidations of polycrystalline Si 0.54Ge 0.46 films at 600°C for 30 and 50 min were discussed. It was found that a stable mixed oxide was obtained for films that were oxidized for 50 min. The fabrication of a trilayer gate structure that consisted of tunnel oxide/oxidized polycrystalline Si 0.54Ge 0.46/rf was studied. It was observed that the charge storage mechanism for the trilayer structure was closely related to the interfacial traps of the nanocrystals.
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/82851
ISSN:	00218979
DOI:	10.1063/1.1645639
Appears in Collections:	Staff Publications

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