Please use this identifier to cite or link to this item:
|Title:||Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?|
|Citation:||Kan, E.W.H., Choi, W.K., Chim, W.K., Fitzgerald, E.A., Antoniadis, D.A. (2004-03-15). Origin of charge trapping in germanium nanocrystal embedded SiO 2 system: Role of interfacial traps?. Journal of Applied Physics 95 (6) : 3148-3152. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1645639|
|Abstract:||The thermal oxidations of polycrystalline Si 0.54Ge 0.46 films at 600°C for 30 and 50 min were discussed. It was found that a stable mixed oxide was obtained for films that were oxidized for 50 min. The fabrication of a trilayer gate structure that consisted of tunnel oxide/oxidized polycrystalline Si 0.54Ge 0.46/rf was studied. It was observed that the charge storage mechanism for the trilayer structure was closely related to the interfacial traps of the nanocrystals.|
|Source Title:||Journal of Applied Physics|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jun 19, 2018
checked on Jun 29, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.