Please use this identifier to cite or link to this item: https://doi.org/10.1088/0960-1317/22/5/055012
Title: Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements
Authors: Lou, L.
Zhang, S.
Park, W.-T.
Tsai, J.M.
Kwong, D.-L.
Lee, C. 
Issue Date: May-2012
Citation: Lou, L., Zhang, S., Park, W.-T., Tsai, J.M., Kwong, D.-L., Lee, C. (2012-05). Optimization of NEMS pressure sensors with a multilayered diaphragm using silicon nanowires as piezoresistive sensing elements. Journal of Micromechanics and Microengineering 22 (5) : -. ScholarBank@NUS Repository. https://doi.org/10.1088/0960-1317/22/5/055012
Abstract: A pressure sensor with a 200 μm diaphragm using silicon nanowires (SiNWs) as a piezoresistive sensing element is developed and optimized. The SiNWs are embedded in a multilayered diaphragm structure comprising silicon nitride (SiN x) and silicon oxide (SiO 2). Optimizations were performed on both SiNWs and the diaphragm structure. The diaphragm with a 1.2 μm SiN x layer is considered to be an optimized design in terms of small initial central deflection (0.1 μm), relatively high sensitivity (0.6% psi 1) and good linearity within our measurement range. © 2012 IOP Publishing Ltd.
Source Title: Journal of Micromechanics and Microengineering
URI: http://scholarbank.nus.edu.sg/handle/10635/82845
ISSN: 09601317
DOI: 10.1088/0960-1317/22/5/055012
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