Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperatures

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1782274

Title:	Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperatures
Authors:	Chen, X.Y. Lu, Y.F. Wu, Y.H. Cho, B.J. Song, W.D. Dai, D.Y.
Issue Date:	15-Sep-2004
Citation:	Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Song, W.D., Dai, D.Y. (2004-09-15). Optical properties of SiO x nanostructured films by pulsed-laser deposition at different substrate temperatures. Journal of Applied Physics 96 (6) : 3180-3186. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1782274
Abstract:	The study of the structures and optical properties related to quantum confinement effects were carried out using silicon oxide (SiO x) nanostructured films. These films were formed by pulsed-laser deposition of silicon in oxygen at different substrate temperatures. Laser ablation of single crystal Si(100) target showed polycrystal structure due to melting and recrystallization. The photoluminescence (PL) peak energy with silicon concentration from pulsed-laser deposition (PLD) and plasma enhanced chemical vapor deposition (PECVD) results supported the fact that light emission originated from quantum confinement theory (QCE).
Source Title:	Journal of Applied Physics
URI:	http://scholarbank.nus.edu.sg/handle/10635/82832
ISSN:	00218979
DOI:	10.1063/1.1782274
Appears in Collections:	Staff Publications

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