Please use this identifier to cite or link to this item:
|Title:||Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel|
|Keywords:||Hole quantum confinement|
|Citation:||Jiang, Y., Singh, N., Liow, T.Y., Lim, P.C., Tripathy, S., Lo, G.Q., Chan, D.S.H., Kwong, D.-L. (2009). Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel. IEEE Electron Device Letters 30 (4) : 392-394. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2013731|
|Abstract:||We demonstrated, for the first time, p-MOSFETs LG ≥ 40 nm with SiGe/Si core/shell channel integrated on bulk Si using a CMOS-compatible top-down processes. The Omega-shaped nanowire (NW)-like channels comprised of ∼12-nm-thick inner SiGe core and 4-nm-thick outer Si shell. The devices exhibited good subthreshold characteristics (with SS ∼128 mV/dec), suggesting successful surface passivation of the SiGe NW body by the outer Si capping layer. Drive currents of ∼167 μA/μm is achieved, which is 15% enhancement over the reference Si-channel devices fabricated by the same process. Double gm peaks are observed at low drain bias for the core/shell SiGe NW devices, confirming the quantum confinement of holes in the SiGe inner core. © 2009 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 22, 2018
WEB OF SCIENCETM
checked on Jun 19, 2018
checked on Jul 6, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.