Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2013731
Title: Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel
Authors: Jiang, Y.
Singh, N.
Liow, T.Y.
Lim, P.C.
Tripathy, S.
Lo, G.Q.
Chan, D.S.H. 
Kwong, D.-L.
Keywords: Hole quantum confinement
Nanowire (NW)
SiGe/Si Core/Shell
Strain
Issue Date: 2009
Source: Jiang, Y., Singh, N., Liow, T.Y., Lim, P.C., Tripathy, S., Lo, G.Q., Chan, D.S.H., Kwong, D.-L. (2009). Omega-gate p-MOSFET with nanowirelike SiGe/Si core/shell channel. IEEE Electron Device Letters 30 (4) : 392-394. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2013731
Abstract: We demonstrated, for the first time, p-MOSFETs LG ≥ 40 nm with SiGe/Si core/shell channel integrated on bulk Si using a CMOS-compatible top-down processes. The Omega-shaped nanowire (NW)-like channels comprised of ∼12-nm-thick inner SiGe core and 4-nm-thick outer Si shell. The devices exhibited good subthreshold characteristics (with SS ∼128 mV/dec), suggesting successful surface passivation of the SiGe NW body by the outer Si capping layer. Drive currents of ∼167 μA/μm is achieved, which is 15% enhancement over the reference Si-channel devices fabricated by the same process. Double gm peaks are observed at low drain bias for the core/shell SiGe NW devices, confirming the quantum confinement of holes in the SiGe inner core. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82803
ISSN: 07413106
DOI: 10.1109/LED.2009.2013731
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