Please use this identifier to cite or link to this item:
|Title:||Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure|
|Authors:||Choi, W.K. |
|Citation:||Choi, W.K., Chim, W.K., Heng, C.L., Teo, L.W., Ho, V., Ng, V., Antoniadis, D.A., Fitzgerald, E.A. (2002-03-18). Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure. Applied Physics Letters 80 (11) : 2014-2016. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1459760|
|Abstract:||The memory effect of a trilayer structure (rapid thermal oxide/Ge nanocrystals in SiO2/sputtered SiO2) was investigated via capacitance versus voltage (C-V) measurements. The Ge nanocrystals were synthesized by rapid thermal annealing of the cosputtered Ge+SiO2 films. The memory effect was manifested by the hysteresis in the C-V curve. Transmission electron microscope and C-V results indicated that the hysteresis was due to Ge nanocrystals in the middle layer of the trilayer structure. © 2002 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jun 17, 2018
WEB OF SCIENCETM
checked on May 16, 2018
checked on Apr 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.