Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1459760
Title: Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure
Authors: Choi, W.K. 
Chim, W.K. 
Heng, C.L.
Teo, L.W.
Ho, V.
Ng, V. 
Antoniadis, D.A.
Fitzgerald, E.A.
Issue Date: 18-Mar-2002
Citation: Choi, W.K., Chim, W.K., Heng, C.L., Teo, L.W., Ho, V., Ng, V., Antoniadis, D.A., Fitzgerald, E.A. (2002-03-18). Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure. Applied Physics Letters 80 (11) : 2014-2016. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1459760
Abstract: The memory effect of a trilayer structure (rapid thermal oxide/Ge nanocrystals in SiO2/sputtered SiO2) was investigated via capacitance versus voltage (C-V) measurements. The Ge nanocrystals were synthesized by rapid thermal annealing of the cosputtered Ge+SiO2 films. The memory effect was manifested by the hysteresis in the C-V curve. Transmission electron microscope and C-V results indicated that the hysteresis was due to Ge nanocrystals in the middle layer of the trilayer structure. © 2002 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82796
ISSN: 00036951
DOI: 10.1063/1.1459760
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