Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2004.831582
Title: | N-type Schottky barrier source/drain MOSFET using Ytterbium silicide | Authors: | Zhu, S. Chen, J. Li, M.-F. Lee, S.J. Singh, J. Zhu, C.X. Du, A. Tung, C.H. Chin, A. Kwong, D.L. |
Issue Date: | Aug-2004 | Citation: | Zhu, S., Chen, J., Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L. (2004-08). N-type Schottky barrier source/drain MOSFET using Ytterbium silicide. IEEE Electron Device Letters 25 (8) : 565-567. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.831582 | Abstract: | Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/Ioff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions. © 2004 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82789 | ISSN: | 07413106 | DOI: | 10.1109/LED.2004.831582 |
Appears in Collections: | Staff Publications |
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.