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|Title:||N-type Schottky barrier source/drain MOSFET using Ytterbium silicide|
|Authors:||Zhu, S. |
|Citation:||Zhu, S., Chen, J., Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L. (2004-08). N-type Schottky barrier source/drain MOSFET using Ytterbium silicide. IEEE Electron Device Letters 25 (8) : 565-567. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.831582|
|Abstract:||Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/Ioff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions. © 2004 IEEE.|
|Source Title:||IEEE Electron Device Letters|
|Appears in Collections:||Staff Publications|
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