Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2004.831582
Title: N-type Schottky barrier source/drain MOSFET using Ytterbium silicide
Authors: Zhu, S. 
Chen, J. 
Li, M.-F. 
Lee, S.J. 
Singh, J.
Zhu, C.X. 
Du, A.
Tung, C.H.
Chin, A.
Kwong, D.L.
Issue Date: Aug-2004
Source: Zhu, S., Chen, J., Li, M.-F., Lee, S.J., Singh, J., Zhu, C.X., Du, A., Tung, C.H., Chin, A., Kwong, D.L. (2004-08). N-type Schottky barrier source/drain MOSFET using Ytterbium silicide. IEEE Electron Device Letters 25 (8) : 565-567. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.831582
Abstract: Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x silicided N-SSDT has demonstrated a very promising characteristic with a recorded high Ion/Ioff ratio of ∼107 and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions. © 2004 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82789
ISSN: 07413106
DOI: 10.1109/LED.2004.831582
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