Nonvolatile resistive switching in graphene oxide thin films

Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.3271177

Title:	Nonvolatile resistive switching in graphene oxide thin films
Authors:	He, C.L. Zhuge, F. Zhou, X.F. Li, M. Zhou, G.C. Liu, Y.W. Wang, J.Z. Chen, B. Su, W.J. Liu, Z.P. Wu, Y.H. Cui, P. Li, R.-W.
Issue Date:	2009
Citation:	He, C.L., Zhuge, F., Zhou, X.F., Li, M., Zhou, G.C., Liu, Y.W., Wang, J.Z., Chen, B., Su, W.J., Liu, Z.P., Wu, Y.H., Cui, P., Li, R.-W. (2009). Nonvolatile resistive switching in graphene oxide thin films. Applied Physics Letters 95 (23) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.3271177
Abstract:	Reliable and reproducible resistive switching behaviors were observed in graphene oxide (GO) thin films prepared by the vacuum filtration method. The Cu/GO/Pt structure showed an on/off ratio of about 20, a retention time of more than 104 s, and switching threshold voltages of less than 1 V. The switching effect could be understood by considering the desorption/absorption of oxygen-related groups on the GO sheets as well as the diffusion of the top electrodes. Our experiments indicate that GO is potentially useful for future nonvolatile memory applications. © 2009 American Institute of Physics.
Source Title:	Applied Physics Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82779
ISSN:	00036951
DOI:	10.1063/1.3271177
Appears in Collections:	Staff Publications

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