Please use this identifier to cite or link to this item:
|Title:||n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport|
|Citation:||Chui, K.-J., Ang, K.-W., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-02). n-MOSFET with silicon-carbon source/drain for enhancement of carrier transport. IEEE Transactions on Electron Devices 54 (2) : 249-256. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2006.888629|
|Abstract:||A novel strained-silicon (Si) n-MOSFET with 50-nm gate length is reported. The strained n-MOSFET features silicon-carbon Si1-y Cy source and drain (S/D) regions formed by a Si recess etch and a selective epitaxy of Si1-yCy in the S/D regions. The carbon mole fraction incorporated is 0.013. Lattice mismatch of ∼0.56% between Si0.987C0.013 and Si results in lateral tensile strain and vertical compressive strain in the Si channel region, both contributing to substantial electron-mobility enhancement. The conduction-band offset ΔEc between the Si0.987C0.013source and the strained Si channel could also contribute to an increased electron injection velocity vinj from the source. Implementation of the Si0.987 C0.013 S/D regions for n-MOSFET provides significant drive current IDsat enhancement of up to 50% at a gate length of 50 nm. © 2007 IEEE.|
|Source Title:||IEEE Transactions on Electron Devices|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Jul 14, 2018
WEB OF SCIENCETM
checked on Jul 4, 2018
checked on Jul 20, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.