Please use this identifier to cite or link to this item:
|Title:||Negative- U property of oxygen vacancy in cubic Hf O 2|
|Authors:||Feng, Y.P. |
|Source:||Feng, Y.P., Lim, A.T.L., Li, M.F. (2005). Negative- U property of oxygen vacancy in cubic Hf O 2. Applied Physics Letters 87 (6) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2009826|
|Abstract:||Oxygen vacancy in cubic Hf O2 was investigated using first-principles calculation based on density functional theory and generalized gradient approximation. Five different charge states (V++, V+, V0, V-, and V - ) were investigated. It was found that the oxygen vacancy in Hf O2 has negative- U behavior and it is energetically favorable for the vacancy to trap two electrons or two holes when the respective charges are injected into the oxide, due to large electron-lattice interaction. Therefore, oxygen vacancy is a main source of charge traps in both n - and p -type metal-oxide-semiconductor field-effect transistors based on Hf O2, and reducing such defects will be useful in limiting charge trapping and in improving the quality of the high- k dielectric in modern complementary metal-oxide semiconductor technology. © 2005 American Institute of Physics.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Feb 14, 2018
WEB OF SCIENCETM
checked on Jan 24, 2018
checked on Feb 19, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.